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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1932 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) high dc current gain- : h fe = 1000(min)@ (v ce = 3v, i c = 2a) applications designed for power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i cm collector current-peak 6 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 35 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1932 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 80 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 80 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 4ma b 1.5 v i cbo collector cutoff current v cb = 80v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 3 ma h fe dc current gain i c = 2a; v ce = 3v 1000 10000 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 35 pf f t current-gain?bandwidth product i e = -0.2a; v ce = 5v; f test = 10mhz 40 mhz isc website www.iscsemi.cn 2 |
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